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The purpose of designing SiNWFET using dual k spacer is to reduce the SCE and to increase the on-off current ratio. The proposed device effectively combines different mechanisms of lowering the sub threshold swing (SS). By using spacers and schottky junction we get more efficient system to improve the design metrics like electric density, potential and resistance of the device. Our simulation results show that though high-κ spacer improves device...
By N. S. Murti Sarma
Paperback: 80 pages
Publisher: LAP LAMBERT Academic Publishing (December 15, 2016)
Language: English
ISBN-10: 9783330023765
ISBN-13: 978-3330023765
ASIN: 3330023767
Product Dimensions: 5.9 x 0.2 x 8.7 inches
Format: PDF Text TXT ebook
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